Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Crystal Substrates > SiC - 3C / Si (100) #2 - Silicon Carbide on Silicon
Substrate Specifications
- Material: Silicon Carbide on Silicon (100) Wafer
- Size: 10 mm x 10 mm x 0.525 mm
- Orientation: (3C)
- Structure: Cubic
- Lattice Constant: a=4.36 Å
- Type/Dopant: N type, undoped
- Growth Method: Plasma-Enhanced Chemical Vapour
- Melting Temperature: 2730 °C [Ref. 12]
- Debye Temperature: 930 °C [Ref. 12]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
Model BDL800IR - MCP
- UHV Treatment: Annealing
- Applications: Automotive industry, power electronics and LEDs [Ref. 12]
LEED Patterns
SiC (0001) 3C - LEED Pattern 120 eV
SiC (0001) 3C - LEED Pattern 170 eV
SiC (0001) 3C - LEED Pattern 490 eV
SiC (0001) 3C - AES Spectrum
SiC (0001) 3C - AES Spectrum
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