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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data

Crystal Substrates > Al2O3 (0001) - Aluminium Oxide

Substrate Specifications

  • Material: Aluminium Oxide
  • Size: 10 mm x 5 mm x 0.5 mm
  • Orientation: C-plane (0001) with edge (11-20)
  • Structure: Hexagonal
  • Lattice Constant: a = 4.758 Å c = 12.992 Å
  • Type/Dopant: Undoped
  • Growth Method: Czochralski
  • Melting Temperature: 2040 °C
  • Debye Temperature: 726.85 °C at 26.85 °C (for Al2O3, orientation not provided) [Ref. 15]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
    Model BDL800IR
  • UHV Treatment: Annealing at 693 °C (estimated temperature of the sample) for 5 minutes
  • Applications: used extensively as a substrate for epitaxial films (nitrides and many others)

LEED Patterns

Al2O3 0001 - LEED Pattern 175 eV
Al2O3 0001 - LEED Pattern 175 eV
Al2O3 0001 - LEED Pattern 230 eV
Al2O3 0001 - LEED Pattern 230 eV
Al2O3 0001 - LEED Pattern 260 eV
Al2O3 0001 - LEED Pattern 260 eV

Al2O3 0001 - AES Spectrum

Al2O3 0001 - AES Spectrum
Al2O3 0001 - AES Spectrum

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