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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data

Crystal Substrates > Al2O3 (1-102) - Aluminium Oxide

Substrate Specifications

  • Material: Aluminium Oxide
  • Size: 10 mm x 10 mm x 0.5 mm
  • Orientation: R-plane (1-102)
  • Structure: Hexagonal
  • Lattice Constant: a = 4.758 Å c = 12.99 Å
  • Type/Dopant: Undoped
  • Growth Method: Czochralski
  • Melting Temperature: 2040 °C
  • Debye Temperature: 1042 K [Ref. 32]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
    Model BDL800IR
  • UHV Treatment: Annealing
  • Applications: used in ceramic materials, III-V nitrides, superconductor and magnetic epitaxy film [Ref. 33]

LEED Patterns

Al2O3 (1-102) - LEED Pattern 150 eV
Al2O3 (1-102) - LEED Pattern 150 eV
Al2O3 (1-102) - LEED Pattern 190 eV
Al2O3 (1-102) - LEED Pattern 190 eV
Al2O3 (1-102) - LEED Pattern 270 eV
Al2O3 (1-102) - LEED Pattern 270 eV

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