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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data

Crystal Substrates > Ge (100) - Germanium

Substrate Specifications

  • Material: Germanium
  • Size: 10 × 10 × 0.5
  • Orientation: (100)
  • Structure: Face Centered Diamond Cubic
  • Lattice Constant: a = 5.658 Å
  • Type/Dopant: Undoped
  • Growth Method: Czochralski
  • Melting Temperature: 938 °C
  • Debye Temperature: 97 °C [Ref. 12]
  • Surface Debye Temperature: Unpublished
  • Characterization Instrument Used: MCP-LEED
    Model LEED 800 MCP1
  • UHV Treatment: Flash Annealing at 800 °C
  • Applications: Semiconductor as a transistor and used to produce alloys

LEED Patterns

Ge (100) - LEED Pattern 51 eV
Ge (100) - LEED Pattern 40 eV
Ge (100) - LEED Pattern 70 eV
Ge (100) - LEED Pattern 70 eV
Ge (100) - LEED Pattern 80 eV
Ge (100) - LEED Pattern 80 eV
Ge (100) - LEED Pattern 110 eV
Ge (100) - LEED Pattern 110 eV
Ge (100) - LEED Pattern 120 eV
Ge (100) - LEED Pattern 120 eV
Ge (100) - LEED Pattern 155 eV
Ge (100) - LEED Pattern 125 eV

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