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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data


Epitaxial Films on Substrates > SOS (100) 0.6µm – Silicon on Sapphire 1.0µm Silicon Film

Specifications

  • Material: Silicon on Sapphire Film 0.6 µm
  • Size: 10 mm x 10 mm x 0.46 mm
  • Silicon Orientation (100)
  • Sapphire Orientation : (11-02, R Plane)
  • Silicon Lattice Constant: a=5.431 Å
  • Sapphire Lattice Constant: a=4.785 Å c=12.991 Å [Ref. 25]
  • Type/Dopant: Intrinsic type, undoped
  • Growth Method: Unpublished
  • Silicon Melting Temperature: 1414 °C [Ref. 25]
  • Sapphire Melting Temperature: 2040 °C [Ref. 26]
  • Silicon Debye Temperature: 645 K [Ref. 27]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
  • Model: BDL800IR - MCP
  • UHV Treatment: Annealing
  • Applications: aerospace and military applications because of inherent resistance to radiation [Ref. 26]

LEED Patterns

SOS (100) 0.6 µm - LEED Pattern 70 eV
SOS (100) 0.6 µm - LEED Pattern 70 eV
SOS (100) 0.6 µm - LEED Pattern 90 eV
SOS (100) 0.6 µm - LEED Pattern 90 eV
SOS (100) 0.6 µm - LEED Pattern 120 eV
SOS (100) 0.6 µm - LEED Pattern 120 eV

SOS (100) 0.6 µm – AES Spectrum

SOS (100) 0.6 µm - Silicon on Sapphire - AES Spectrum
SOS (100) 0.6 µm – AES Spectrum

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