Low Energy Electron Diffraction & Auger Electron Spectroscopy Data
Crystal Substrates > Ga2O3-β (201) - Gallium Oxide
- Material: Gallium Oxide
- Size: 10 × 10 × 0.5 mm
- Orientation: (201 ± 0.7˚)
- Structure: Monoclinic
- Lattice Constant: a = 12.23 Å, b = 3.04 Å, c = 5.80 Å
- Type/Dopant: N type/ Sn-doped
- Growth Method: Czochralski
- Melting Temperature: 1900 °C
- Debye Temperature: 600 °C [Ref. 3]
- Surface Debye Temperature: Unpublished
- Characterization Tool: LEED-AES
Model LEED 800
- UHV Treatment: Annealing at 520 °C (estimated temperature of sample) for 10 minutes
- Applications: Emerging uses in sensors, power electronics and semiconductor electronics
LEED Patterns
Ga2O3-β (201) - LEED Pattern 45 eV
Ga2O3-β (201) - LEED Pattern 85 eV
Ga2O3-β (201) - LEED Pattern 120 eV
GaN - AES Spectrum
GaN - AES Spectrum
Related Links
