ocivm.com > Science & Applications > LEED and AES Data Library > Ti / Ga2O3-β (201)

LEED & AES Data Library • Browse by Element/Compound • Browse by Application

Low Energy Electron Diffraction & Auger Electron Spectroscopy Data

Epitaxial Films on Substrates > Ti / Ga2O3-β (201) - Titanium on Gallium Oxide

Specifications

  • Material: Titanium on Gallium Oxide (201)
  • Size: 10 × 10 × 0.5 mm
  • Orientation: (201 ± 0.7 °)
  • Structure: Monoclinic
  • Lattice Constant: a = 12.23 Å, b = 3.04 Å, c = 5.80 Å
  • Type/Dopant: N type/ Sn-doped
  • Film Growth Method: Molecular Beam Epitaxy
  • Melting Temperature: 1900 °C
  • Debye Temperature: 600 °C [Ref. 3]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
    Model LEED 800
  • UHV Treatment: Annealing at 520 °C (estimated temp. of sample) for 2 minutes
  • Applications: Emerging uses in sensors, power electronics and semiconductor electronics

LEED Patterns - Ga2O3-β (201) with Ti (estimated layer thickness of 48.0nm) deposited on the sample and annealed

Ti Ga2O3-β (201) - LEED Pattern 45 eV
Ga2O3-β (201) - LEED Pattern 45 eV
Ti Ga2O3-β (201) - LEED Pattern 85 eV
Ga2O3-β (201) - LEED Pattern 85 eV
Ti Ga2O3-β (201) - LEED Pattern 120 eV
Ga2O3-β (201) - LEED Pattern 120 eV

Ti / Ga2O3-β with TI - AES Spectrum

Ga2O3-β with TI - AES Spectrum
Ga2O3-β with TI - AES Spectrum

Related Links