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Low Energy Electron Diffraction & Auger Electron Spectroscopy Data


Epitaxial Films on Substrates > Ti / AlN / Si (0001) - Titanium on Aluminum Nitride on Silicon

Specifications

  • Material: An estimated 12nm of Ti on 200nm of AlN on Si
  • Size: 10 mm × 10 mm × 0.5 mm
  • Orientation: (111) with edge (110)
  • Structure: Wurtzite
  • Lattice Constant: a= 3.11 Å [Ref. 9]
  • Type/Dopant:
    • AlN: Undoped
    • Si: P type, B-doped
  • Film Growth Method: Molecular Beam Epitaxy
  • Melting Temperature: 2500 °C
  • Debye Temperature (at 27 °C): 876 °C [Ref. 9]
  • Surface Debye Temperature: Unpublished
  • Characterization Tool: LEED-AES
  • Model LEED 800
  • UHV Treatment: Annealed at 950 °C for 2 Minutes
  • Applications: A cost effective way to replace AlN single crystal substrates. Valuable in semiconductor electronics, LEDs, radars, and transistors

LEED Patterns

Ti / AlN / Si (0001) - LEED Pattern 145 eV
Ti / AlN / Si (0001) - LEED Pattern 145 eV
Ti / AlN / Si (0001) - LEED Pattern 180 eV
Ti / AlN / Si (0001) - LEED Pattern 180 eV
Ti / AlN / Si (0001) - LEED Pattern 230 eV
Ti / AlN / Si (0001) - LEED Pattern 230 eV

Ti / AlN / Si (0001) - AES Spectrum

Ti / AlN / Si (0001) - AES Spectrum
Ti / AlN / Si (0001) - AES Spectrum

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